Neural AFE

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Figure 1: PCB

Overview

The Neural AFE Board is a precision analog front-end platform designed to acquire low-amplitude biopotential signals (e.g., EEG, EMG) in electrically noisy environments. The system integrates ultra-low noise amplification, 60 Hz notch filtering, hardware-level protection, and STM32-based data acquisition. Designed on a 4-layer PCB, the board targets automotive-grade and neurotech applications for real-time signal analysis and edge AI integration.

Key Features

Instrumentation Amplifier: INA333

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Figure 2: Instrumentation Amplifier Schematic

The INA333 was selected for its low input bias current (200 pA typ), low offset voltage (25 µV typ), and ultra-low quiescent current (50 µA typ). The gain was set to approximately 1000 using the following formula:

G = 1 + (50kΩ / RG)
        

Solving for RG = 49.9Ω, we achieve:
G ≈ 1 + (50,000 / 49.9) ≈ 1002

This configuration offers high gain with minimal external components, ideal for microvolt-level signal extraction with minimal noise contribution.

Input Protection and Filtering

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Figure 3: Filters Schematic

A 10 kΩ resistor in series with a 10 nF capacitor forms a low-pass RC filter:

fc = 1 / (2πRC) = 1 / (2π * 10kΩ * 10nF) ≈ 1.59 kHz
        

This suppresses high-frequency noise while offering negligible signal distortion in the 0–100 Hz EEG band.

Reference Voltage Divider and Buffering

A mid-supply reference is created using two 10kΩ resistors and a 1 µF capacitor:

VREF = VCC / 2 = 3.3V / 2 = 1.65V
        

This reference is buffered using a MCP600 op-amp in unity-gain configuration to reduce impedance and stabilize biasing.

High-Pass Filtering for DC Rejection

A series capacitor (1 µF) and a 330 kΩ resistor form a high-pass filter:

fc = 1 / (2πRC) ≈ 0.48 Hz
        

This removes slow DC drift while preserving all meaningful neural activity in the frequency band of interest. See Figure 3 for more information.

Notch Filter for Power Line Rejection

A twin-T notch filter was designed using the following component values: R1 = 13.3 kΩ, R2 = 26.5 kΩ, C1 = 47 nF, C2 = 100 nF

The notch frequency is determined by:

fnotch = 1 / (2πRC) ≈ 60 Hz
        

This configuration yields strong attenuation at 60 Hz, eliminating power-line interference in indoor environments. See Figure 3 for more information.

Microcontroller: STM32F103C8T6

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Figure 4: ESP32 Schematic

Selected for its cost-effectiveness, built-in ADCs, and broad software support. UART and USB support allows seamless integration with downstream logging or edge ML systems. Analog inputs are buffered to reduce noise coupling.

PCB Layout Strategy

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Figure 5: PCB 2d

The board uses a 4-layer stackup: Top Layer (Components + Power), Layer 2 (Signal), Layer 3 (Power), Bottom Layer (GND). Key layout decisions include:

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Figure 6: All Pours
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Figure 7: GND Pour

Challenges & Constraints

Tools Used